Cu-Al Transition Pads for High-Power Wire Bonding

• Material Composition: Premium Copper-clad Aluminum alloy, Oxygen-Free Copper, and specialized Fe-Ni alloy options available.
• Advanced Layer Stack: Capable of manufacturing complex multi-layer structures (e.g., Al / Cu / Ni / Au / Au-Sn) to suit specific reflow and wire bonding requirements.
• Micro-Precision Sizing: Small-scale dimensional capabilities down to 0.5 x 0.5 mm with strictly controlled, sagging-free edge profiles.
• Surface Quality: Ultra-smooth, oxidation-free uniform coating with no peeling or bubbling, optimized for ultrasonic wedge bonding.
• Bonding Strength: Top aluminum layer consistently achieves wire bond pull strengths greater than 5g.
• Geometric Flatness: Strict manufacturing tolerances achieving ±0.01 mm flatness, ensuring zero voids during substrate attachment.

• IGBT and Power MOSFET Modules
• Automotive Power Electronics (Inverters & Converters)
• High-Power IC Packaging
• RF and Microwave Modules
• High-Brightness LED (HB-LED) Packaging
• Hybrid Integrated Circuits (HIC)

As a strategic supplier for advanced semiconductor packaging, Sanjin engineers transition pads that guarantee a high-yield, repeatable manufacturing process. Our precision bimetallic pads not only solve critical interconnect failure points in power electronics but are also seamlessly integrated into your automated workflows. Supplied in custom tape-and-reel packaging, our transition pads enable high-speed, high-volume pick-and-place assembly with absolute consistency and minimal manual intervention.